Abstract
Amorphous silicon Schottky barrier photodetectors with internal quantum efficiencies of 36% and sampling oscilloscope limited response times of 40 ps (full width at half-maximum) have been fabricated. Utilizing ultrathin films of rf glow discharge deposited hydrogenated amorphous silicon, carrier sweep-out was achieved in a new microstrip transmission line structure. The performance of these devices, for picosecond pulse detection, is now comparable to that of crystalline semiconductor detectors.
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