Abstract
The Deep Level Transient Spectroscopy (DLTS) method is one of the basic methods widely used for determining the parameters of defects giving rise to deep levels in the band gap of a semiconductor material. It is proposed using the L-curve approach when choosing the regularization parameter in the Laplace-DLTS method for the exclusion of uncontrolled errors and an increase in reliability of obtained results. The potential of the method is demonstrated by the numerical analysis of the modeling relaxation signal, which contains three exponential functions with almost identical values of parameters and a small noise component. It is shown that the proposed variant of the Laplace-DLTS with using the L curve for choosing the regularization parameter or the LL-DLTS has a higher reliability in comparison with the Laplace-DLTS method when choosing the regularization parameter by residual.
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