Abstract
The state of rare earth impurities at concentrations of about 1018 cm−3 in volume-doped AIIIBV semiconductor crystals can be described in the framework of the model of quasi-molecular rare earth centers of Ln2O3 type and spontaneous polarization regions-coupled spin-polarons localized on small donors.
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Schedule a callMore From: IOP Conf. Series: Materials Science and Engineering
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