Abstract
We investigated the structural properties of LaNiO3 thin films of three different thicknesses deposited by pulsed laser deposition on Si(001) mainly by using a synchrotron X-ray scattering measurement. The LaNiO3 thin films were grown with the (00l) preferred growth direction, showing completely random distribution in the in-plane direction. In the early stage of the growth, the film was almost unstrained. However, as the film grew further, tensile strain was markedly involved. Also its surface became rougher but its crystalline quality improved significantly with increasing film thickness. A completely (00l)-oriented (Pb0.4Zr0.6)TiO3 thin film was successfully grown on such a LaNiO3/Si(001) substrate at a substrate temperature of 350 °C by using the same pulsed laser deposition. Our results show that the LaNiO3 film can serve effectively as a bottom electrode layer for the preparation of a well-oriented (Pb0.4Zr0.6)TiO3 thin film on Si substrates.
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