Abstract
Monolayers of PbSe and PbS quantum dots and PbSe/CdSe core/shell quantum dots madeby Langmuir–Blodgett deposition are compared, with a focus on the formation, themorphology and the photoluminescence properties of the films. It is shown that PbSequantum dots suffer from oriented attachment and a complete quenching of theirphotoluminescence after Langmuir–Blodgett processing. While the oriented attachment canbe resolved by growing a CdSe shell around the PbSe core QDs, the photoluminescence ofPbSe/CdSe Langmuir–Blodgett monolayers remains largely quenched. In thecase of PbS quantum dots, the formation of a close-packed monolayer is moredifficult, yet the resulting films show no sign of oriented attachment and theirphotoluminescence is comparable to that of the original, suspended quantum dots.In spite of their slow oxidation in a matter of weeks, these results mark PbSquantum dots as the preferred material for light-emitting applications in the near IRbased on Langmuir–Blodgett monolayers of lead chalcogenide quantum dots.
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