Landau-level mixing effect inGa1−xAlxAs/GaAs/Ga1−xAlxAsdouble-barrier resonant tunneling structures

Abstract

We report the theoretical study of the current-voltage characteristics of an n-type Ga 1 - x Al x As/GaAs/Ga 1 - x Al x As double-barrier structure in a strong magnetic field perpendicular to the interface. Axial approximation is used. We demonstrate that the Landau index-conserving (Δn=0 and Δs=0) resonant tunneling leads to the main resonant peak, and the Landau index-nonconserving (An = I and Δs=-1) resonant tunneling yields the weak secondary peak beyond the main peak, due to the conservation of the Landau-level mixing index q. For conduction electrons, q is the sum of the Landau index n and the spin s.