Abstract
We have studied the magnetic field dependence of the tunneling current in GaAs/AlAs double barrier structures. We report new results, periodic with the inverse of the magnetic field, on a weak feature on the rising side of the main resonant tunneling peak. This feature is attributed to resonant tunneling from a lightly doped contact region interacting with the quasi-two-dimensional state in the accumulation layer. A qualitative interpretation is given.
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