Abstract
An innovative technology with a dry film resist (Riston) for use in microsystem engineering applications is presented. In view of the simplicity of forming a controllable resist thickness (20 – 100 μm/level), inherent planarization for multilevel processes in 3D microsystems and high, stable over-wafer thickness uniformity, we have investigated the use of dry film resists to realise high aspect ratio microstructures > 10:1 using both reactive ion etching (RIE) and excimer laser ablation.
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