Lambert-W function-based parameter extraction for FDSOI MOSFETs down to deep cryogenic temperatures

Abstract

The applicability of the Lambert-W function-based parameter extraction methodology is demonstrated for 28 nm FDSOI MOSFETs down to deep cryogenic temperatures (4.2 K). The Lambert-W function enables to accurately model the inversion charge and drain current MOSFET characteristics from weak to strong inversion, while using the classical mobility law down to liquid helium temperature. The main MOSFET parameters were extracted versus temperature and gate length, showing the temperature independence of short channel effects and the strong mobility degradation at short channel length due to increased neutral defect scattering.