Abstract
In this work, the performance of a Si0.5Ge0.5 sourced dual electrode doping-less Tunnel FET (DEDLTFET) biosensor using dielectric modulation is studied for different cavity length, thickness (Tbio) and charge densities (QF). The use of silicon-germanium (SiGe) based source also shows an improvement in the performance of the charge plasma Tunnel FET because of its enhanced drain current. Biomolecules are introduced inside the cavity region and their impact on the drain current has been investigated to design the biosensor. The sensitivity factor of the biosensor depends upon the drain current obtained which is proportional to the dielectric constant (k) and the charge density of the biomolecules. The proposed biosensor achieves a maximum drain current sensitivity of 7.7 × 108 at a cavity length of 25 nm and 2.7 × 109 at a cavity length of 30 nm. When compared with the conventional TFET biosensors, it is observed that Si0.5Ge0.5 sourced doping-less TFET biosensor provides better drain current sensitivity.
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