${L}_{{g}} = {30}$ nm InAs Channel MOSFETs Exhibiting ${f}_{\textit {max}} ={410}$ GHz and ${f}_{{t}} = {357}$ GHz

Abstract

We report ${L}_{g}= 30$ nm InAs-channel MOSFETs exhibiting 420 GHz ${f}_{\textit {max}}$ , record for a III-V MOSFET, and 357 GHz ${f}_{t}$ . The device incorporates a 5-nm strained InAs channel grown on an InP substrate. To reduce the parasitic gate-source and gate-drain capacitances, regrown lateral access regions increase the separations between the gate and the N+ source and drain; modulation doping within these access regions provides a low associated series resistance, enabling high ${g}_{m}$ . The 30 nm ${L}_{g}$ device shows an 1.5 mS/ $\mu \text{m}$ DC peak extrinsic ${g}_{m}$ at ${V}_{\textit {DS}} = 0.5$ V and ${V}_{\textit {GS}} = 0.3$ V, 91% of the value (1.65 mS/ $\mu \text{m}$ ) extracted from 10 MHz RF measurements, indicating a low DC-RF dispersion.