Abstract
This paper describes record power performance of Ku-band power amplifiers fabricated with a 0.45 /spl mu/m gate GaAs-based heterojunction FET (HJFET). The developed HJFET amplifier with 25.2 mm gate periphery delivered a 41.98 dBm (15.8 W) output power with 36% power-added efficiency (PAE) and 9.6 dB linear gain at 12 GHz. This is the highest PAE, gain and output power combination achieved from a single-chip FET power amplifier at Ku-band.
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