Abstract

This paper describes a record power performance of a Ku-band power amplifier fabricated with a one-chip 0.45 /spl mu/m gate GaAs-based heterojunction FET (HJFET). The developed HJFET amplifier with 16.8 mm gate periphery exhibited a 40.1 dBm (10.2 W) output power with 50% power-added efficiency (PAE) and 9.5 dB linear gain at 12 GHz. This is the highest PAE, gain and output power combination achieved by a single FET power amplifier at this frequency. >

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.