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Abstract
Polycrystalline silicon thin-film transistors (poly-Si TFTs) with an asymmetric dual-gate, consisting of a long-gate TFT and a short-gate TFT in series, suppress kink current and increase output resistance. The long-gate TFT operates in a linear regime and confines the total current flow by its current operation region. The entire device does not suffer from kinks in spite of a high drain bias. Experimental results show that an asymmetric design of the dual-gate structure improves kink-free characteristics compared with conventional single- and dual-gate TFTs. The hot-carrier stress reliability of the short-gate TFT is not severely degraded due to kink current suppression.
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