Abstract
Kink-free AlInAs/GaInAs/InP HEMTs have been fabricated from an MBE structure grown under normal growth condition. Devices with 1 μm gate-length exhibit an extrinsic transconductance of 450mS/mm and a maximum drain current of 600mA/mm which represent the best results for 1 μm gate devices. The DC output conductance shows no kink over the entire gate bias range. The elimination of the kink is attributed to the high quality AlInAs buffer layer and a low mismatch between the AlInAs buffer layer and InP substrate.
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