Abstract
The thermal oxidation kinetics of (100) and (111) oriented silicon in several oxygen/nitrogen mixtures ranging in oxygen partial pressure from 0.02 to 1.0 at 1200°C have been investigated. The parabolic rate constant and the linear rate constant varied linearly with respect to the oxygen partial pressure, while τ, a factor which accounts for an initial accelerated oxidation rate during dry oxidation of silicon, varied inversely with the oxygen partial pressure.
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