Abstract
The results of studies of the morphological properties of an oxide film obtained by the anodic oxidation of a n-Si(100) single-crystal silicon wafer in distilled water in the potentiostatic mode are presented. Irrespective of the value of the applied potential and the anodic treatment time, the oxide coating is always formed as separate islands, interconnected by a thin layer of barrier oxide, the thickness of which is adjusted by the pH value of an alkaline solution (pH > 7) produced in a limited area of local oxidation.
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