Abstract
A study was made of the redistribution of rapidly-diffusing impurities during the cooling of silicon plates with an internal getter. It was found that a linear cooling rate is not optimal for gettering. An optimum cooling law was established. With a cooling time t > 103 sec, this law makes it possible to reduce the concentration of rapidly-diffusing impurities in the free zone of the plate by one order of magnitude. Experimental results confirm the principles established.
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