Abstract

We report on a change in the surface density of glucose oxidase (GOx) molecules on surface of Si/SiO2/polyethyleneimine structures depending on type of Si conductivity, adsorption time and white-light illumination of a substrate during GOx adsorption. It is clearly shown by AFM images that the dependence of GOx adsorption on adsorption time and illumination is different for n-Si and p-Si substrates. The results can be explained by the electrostatic interaction between GOx molecules and the surface charge of Si, which depends on illumination.

Highlights

  • Atomic force microscopy (AFM) was used to study the kinetics of photo-stimulated adsorption (PSA) of GOx molecules onto the surface of both p- and n-type silicon

  • GOx molecules from Aspergillus niger was used as enzyme molecules

  • The PEI molecules were adsorbed on silicon substrates from the 1 mg/ml aqueous solution during 10 min followed by rinsing in water during 10 min and drying

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Summary

Introduction

AFM was used to study the kinetics of photo-stimulated adsorption (PSA) of GOx molecules onto the surface of both p- and n-type silicon. The experiments were performed with single-crystal silicon wafers of n-type (ρ = 4 Ω cm) and p-type (ρ = 8 Ω·cm). The substrates were boiled in a peroxide–ammonia solution and rinsed in deionized water (resistivity 18.2 MΩ·cm). This treatment leads to “reconstruction” of a native oxide layer while the silicon surface acquires negative charge in deionized water due to activation of OH-groups.

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