Abstract
The processes of the phase formation and phase transitions in thin CuIn5Se8 layers are studied by the kinematic electron-diffraction method. It is shown that Cu2Se and In2Se3 films obtained in the ratio of 1: 5 are formed in the amorphous state. The parameters of kinematic crystallization for amorphous CuIn5Se8 films are obtained. The dimension of crystal-nucleus growth, and the activation energies of nucleation and crystal growth are determined.
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