Abstract
Electron spin resonance and optically induced electron spin resonance measurements on hydrogenated amorphous silicon and germanium are useful probes of charge carriers in localized electronic states near the edges of the conduction and valence bands (band-tail states) and of defects, such as silicon and germanium dangling bonds. We review recent results on the recombination kinetics of charge carriers trapped in band-tail states. We also review recent results on the kinetics of metastable optically induced germanium dangling bonds in hydrogenated amorphous germanium. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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