Abstract
AbstractWe have used Rutherford backscattering spectroscopy (RBS) to study the kinetics of NiSi growth during low temperature annealing of a Ni(Cr) layer on Si. During the silicide growth, a Cr-rich amorphous layer was formed between the silicide and the Ni(Cr) layers. This amorphous layer produces a slow and uniform silicide growth rate; the NiSi thickness was 60 nm after a 2h anneal at 475°C. After prolonged annealing, the amorphous layer recrystallized, causing very rapid silicide growth. When a thin (0.5 nm) layer of Pt was deposited between the Si and Ni(Cr) layers, the amorphous layer was thinner, the silicide growth rate was correspondingly greater and the rapid growth stage occurred earlier. The RBS data agreed qualitatively with transmission electron microscopy results for the growth of both the amorphous layer and the silicide.
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