Abstract
Bilayer thin films of the Te/Se system evaporated onto a p-type Si wafer are irradiated at room temperature using a 500 keV Ar+ beam. The resulting growth of an ion mixed layer at the interface is correlated with the variation in electrical resistivity as the ion beam fluence increases. Electrical resistivity results are explained within the available theoretical models and showed that mixing is due to both cascade and recoil mixing processes. A 2 MeV 4He+ backscattering spectrometry (RBS) is also used to study the formation of the mixed layer at the interface, where a uniform mixed layer is formed at the interface at a fluence of 1.3 × 1016 Ar+/cm2.
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