Abstract
We evaluate Be and Si segregation in GaAs during growth by gas source molecular-beam epitaxy and molecular-beam epitaxy. We find that the dopant segregation lengths, when detected, are thermally activated with an energy of 0.6 eV. These kinetics are too small to be explained by classical models of dopant segregation, but instead lie close to motion energies corresponding to the elementary jumps executed by the dopant near the surface.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Paper Title
Journal
Date
