Abstract
We evaluate Be and Si segregation in GaAs during growth by gas source molecular-beam epitaxy and molecular-beam epitaxy. We find that the dopant segregation lengths, when detected, are thermally activated with an energy of 0.6 eV. These kinetics are too small to be explained by classical models of dopant segregation, but instead lie close to motion energies corresponding to the elementary jumps executed by the dopant near the surface.
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