Abstract
In order to develop a computer-assisted process optimization of In1-xGaxAsyP1-y metalorganic chemical vapor deposition (MOCVD), the kinetics of GaAs growth was studied as the first step. For the accumulation of reaction data of source materials, the decomposition rates of trimethylgallium (TMGa) and tertiarybutylarsine (TBAs) were studied using a flow tube reactor and a Fourier transform infrared spectrometer (FT-IR). Special attention was paid to the effect of TBAs concentration on the decomposition rates of TMGa. The GaAs growth rate profile in a commercial MOCVD reactor was analyzed through both experiment and simulation. The profile was dependent on the gas velocity and total pressure. This dependency was explained by a reaction model which was deduced from the experimental observations: TMGa decomposes to a gas-phase intermediate which subsequently forms the GaAs film. The fluid dynamic calculations combined with this reaction model led to growth rate distributions which agreed well with the experimental data. The analysis revealed that the GaAs growth rate is limited by the gas-phase reactions of TMGa as well as the mass-transport of the intermediates, and that precise measurement of the reaction between TMGa and TBAs is essential for an accurate simulation.
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