Abstract
AbstractIn this work we investigate bias - induced metastability in CIGS solar cells. Long - term capacitance transients have been measured for two baseline CIGS devices with different efficiencies and a CGS cell in order to analyze carrier trapping processes. Based on the results we discuss hole emission process which leads to metastable increase of net acceptor density and also hole capture related to its relaxation. Time constants and activation energies for hole emission and capture have been obtained. Apart of carrier trapping processes we have also distinguished an interface-related change of capacitance. Our results indicate processes involving thermal lattice relaxation. We explain them in light of properties of (VSe+VCu) divacancy, defect with negative correlation energy, which can exist in both donor and acceptor configuration.
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