Abstract
AlxGa1−xN layers with high aluminum content of x ∼ 0.68–0.73 were grown in an 11 × 2-in. AIX 2400 G3 HT planetary reactor by metal–organic vapor phase epitaxy. Growth trends are analyzed by reaction-transport modeling in a wide range of growth conditions. Gas-phase nucleation resulting in both Al and Ga consumption into nanoparticles is a major mechanism affecting the growth efficiencies of AlN and GaN. Process windows suitable to grow multiple quantum wells (MQWs) for deep UV applications are found for a range of pressures, temperatures, and V/III ratios.
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