Abstract
The temperature dependence of the generation kinetics of F centers and their aggregates in a LiF/Si(111) thin-film system after irradiation with low-energy (80-eV) electrons was studied by total current spectroscopy. It was shown that, in all cases, low-temperature annealing results in degradation of the formed centers followed by their coalescence. A new absorption band with an energy of 3.6 eV corresponding to anionic cluster complexes was found.
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