Abstract
The impact of tin (Sn) doping on boron–oxygen (B–O) complexes responsible for light-induced-degradation (LID) in p-type Czochralski silicon has been investigated. It is found that Sn can effectively suppress the formation of B–O complexes, with increased activation energies and pre-exponential factors during both generation and dissociation processes, which are essentially attributed to the associated compressive strain as well as the formation of energetically favorable SnB complex, as revealed in experiment and by first-principle calculation. The results demonstrate the influence of Sn doping on the LID and strongly suggest its promising applications in photovoltaic industry.
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