Abstract
AbstractWe studied the effect of the scattering accompanying dispersion in quasi‐ballistic transport at room temperature in nanoscale semiconductor devices primarily by using numerical calculations. The electron velocity distribution function based on a simple n+‐n‐n+ structure was directly determined by solving the semiclassical Boltzmann transport equation. We discovered that the velocity distribution function of electrons near the potential barrier obtained from the Boltzmann transport equation differs from the function assuming ballistic transport and always has a negative velocity component due to scattering in the channel region that cannot be ignored. This analysis result means that the scattering effect in the channel region cannot be ignored even for nanoscale elements. © 2005 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 88(11): 1–9, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecjb.20196
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