Abstract
ABSTRACTWe investigate the growth of quenched Xe films formed by deposition onto a cold (15-35K) substrate via in situ measurements of x-ray reflectivity and diffraction. Surface roughness, film density, and crystallinity are determined as a function of Xe film thickness, substrate temperature and Xe flux in order to test for dynamic scaling behavior. Deposition of polycrystalline films with random crystallite orientations is achieved through heating of a grafoil sheet that is enclosed in the sample cell and has previously been covered with bulk Xe. At 16K the films are sufficiently quenched to be stable over several days, while at 25K annealing takes place. Differing atomic mobilities at different temperatures lead to contrasting scaling behavior. The substrate remains unchanged under repeated film deposition and desorption and therefore allows a systematic comparison of different films.
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