Abstract
A kinetic theory of the interaction of metals and semiconductors with active gases is given for a wide temperature range and different gas pressures. Equations describing the kinetics of primary direct gas–metal interaction are derived with due allowances for the effect of hot spots caused by heat of a chemical reaction. A dynamic model of the growing film of reaction products, taking into account transient stages of the process, as well as point defect concentration, is raised. An asymptotic parabolic equation derived in terms of transient kinetics describes the growth of the film, starting from its onset and till the formation of thick films at different temperatures. A reverse problem of determining diffusion parameters of the oxidation process and the concentration and types of the point defects from experimental kinetic data is also solved. These equations are verified by the example of silicon–oxygen system.
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