Abstract
Large void formation (10% swelling) has recently been observed experimentally near the (1 0 0) surface of GaSb upon Sn ion implantation at 6 dpa below 140 K. In this paper, the accumulation of vacancies is studied by kinetic Monte Carlo simulation. In order to achieve a large swelling, the following conditions have to hold. (1) In the absence of antisite defect formation, the initial distribution diameters of vacancies and interstitials in the cascade are 40 a and 44.5 a, respectively, where a is the lattice constant of GaSb. (2) In the case of antisite defect formation, the corresponding initial distribution diameters are 40 a and 46 a, respectively. Vacancy migration is assumed to be radiation-induced. Although second nearest neighbor hopping and vacancy pair migration models are tested for void migration, no large difference is detected in the swelling.
Published Version
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