Abstract
The photochemical processes in a mixture of Si2H6 and C2H2 irradiated with an ArF excimer laser (193 nm) are analyzed numerically using rate equations. The simulation includes 19 processes of photolysis, chemical reactions, and optical emission. The densities of radicals, excited atoms, etc. have been calculated as a function of time. The dependence of SiH* intensity on the laser energy is quadratic up to 10 mJ and shows saturation above 40 mJ. The Si* and C2* intensities are proportional to the 1.3–1.7 power of the laser energy. The C2* emission intensity of Si2H6/C2H2 mixture is higher than that of pure C2H2. These calculated results agree with the results of optical emission spectroscopy experiments. The reactions of Si* with C2H2 and C2H contribute to the increase in C2* emission and in the deposition rate when Si2H6 is added to C2H2.
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