Abstract
We report new types of kinetic growth instabilities during silicon homoepitaxy on vicinal Si(001) surfaces with miscut angles $\ensuremath{\le}{2}^{\ensuremath{\circ}}$. They occur under frequently employed growth conditions in an extensively studied material system. The characteristic features are (i) kinetic step bunching at low growth temperatures, (ii) a macroscopic zigzag morphology of $〈110〉$ segments at intermediate temperatures, and (iii) a smooth, noncorrelated morphology at high growth temperatures and after annealing. A qualitative model is discussed that relates the morphological features with the kinetics of step incorporation and diffusion in connection with a symmetry-breaking miscut.
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