Abstract
The fundamental kinetics of metal organic vapor phase epitaxy (MOVPE) related ternary compound-InAsP has been systematically investigated by analyzing selective area growth. The overall surface reaction rate constant (ks-overal) of indium species in this material system is successfully obtained, it shows a composition dependence in which ks-overall increases with the amount of P in InAs1-xPx. On the basis of binary kinetics of InAs and InP, ks-overall can be estimated from the linear combination of the surface reaction rate constant (ks) in the As site and the ks in the P site. Result shows that the linear estimation of ks-overall is consistent with experimental data, which indicates that the incorporations of indium species in the P and As sites should be almost independent of each other. These results revealed that the real surface process of the ternary material system provides significant information and fundamental concepts for further modeling of more complicated quaternary compounds, such as InGaAsP.
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