(Keynote) Atomic Layer Processing in Semiconductor Research and Development

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As semiconductor process technology has evolved from node to more advanced node, continued atomic layer processing innovations in materials and hardware have improved film quality, device performance and overall cost. In this talk, Intel will cover atomic layer processes and where they have been critical to the high-volume manufacturing of transformational new semiconductor products.As the semiconductor industry moves into the gate all around RibbonFET era, atomic layer control is required across more layers with ever increasing geometric complexity. New device architectures institute hard limits on film thickness which make atomic layer processes ideal. In fact, for some applications, the low growth per cycle or etch per cycle of atomic layer processes are required to achieve the fine control needed for optimal device performance. Other traditionally used deposition techniques will not be able to scale to these new devices; atomic layer processes will need to step in by delivering high quality dielectrics, metals and semiconductor materials into smaller, more complex device shapes. These materials are often multi-component and require precise compositional control, including that of dopants. Next generation devices are increasing multi-colored meaning that an increasing variety of materials are found in close proximity to each other. The ability to selectively place materials only where needed, through intrinsically selective processes, inhibitor chemistries and/or subsequent selective etch techniques can enable new structures and reduce patterning costs. Molecular layer deposition of EUV photoresists is also being explored to introduce high absorptivity elements for next generation lithographic patterning. These challenges, and the resultant opportunities, will be magnified as coplanar CMOS nanoribbon devices are replaced with stacked nanoribbon architectures.Finally, we will cover the largest opportunities for future devices, covering needs for atomic layer processes for the integration of two-dimensional materials, e.g., graphene or transition metal dichalcogenides, and the emerging field of epitaxial complex oxides for ultra-low energy devices which necessitate the development of chemical vapor phase etches of non-traditional materials for the semiconductor industry.