(Keynote) Atomic Layer Deposition Trends and Challenges in High-k/Metal Gate and Alternative Channel CMOS Processing

Abstract

The utilization of Atomic Layer Deposition (ALD) has gained wider adoption in FEOL CMOS processing over the last several technology generations and is expected to accelerate as the semiconductor industry migrates to FinFET device architectures. The primary drivers for the migration to ALD include: dimensional control, conformality (step coverage), reduction in pattern effects (especially micro-loading), low temperature processing requirements and the need for low damage/substrate interactions. The areas of greatest initial use center on the high-k and metal transistor gate (HKMG). Most significantly, the quality of these ALD films has improved to the point that they are now even used to replace thermal grown oxide films and are a key enabler for the next generation of channel materials where traditional oxide growth is not an option for certain devices.