Key Factors of Laser-Induced Single Event Transients on Different SiGe Process

Abstract

Electronic equipment applied in the complex space environment may have combined damage under the independent conditions of temperatures, radiation effects and operating modes. The aim of this study is to evaluate the laser-induced single event transients (SETs) on dependence of the pre-irradiation elevated temperatures, accumulated total dose, bias conditions and laser energy for different SiGe processes. The experimental results show that the SETs response of SiGe HBTs are closely associated with the device structure and HBT designs. TCAD simulations are combined to demonstrate that KT9041 SiGe HBTs are more sensitive to SETs than IBM43RF0100.