Abstract
A scanning force microscope with a base temperature below 300 mK is used for measuring the local electron density of a two-dimensional electron gas embedded in a Ga[Al]As heterostructure. At different separations between atomic force microscope tip and sample, a dc voltage is applied between the tip and the electron gas while simultaneously recording the frequency shift of the oscillating tip. Using a plate capacitor model, the local electron density can be extracted from the data. The result coincides within 10% with the data obtained from transport measurements.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
