Abstract
This thesis presents the design of 24- and 60-GHz CMOS amplifier RFICs for millimeter-wave communication applications. The designed RFICs are fabricated with TSMC CMOS 0.18 μm and 90-nm standard processes, respectively. At first for the Ka-band amplifier design, a 15 - 22 GHz wideband CMOS low noise amplifier (LNA), 24-GHz high-efficiency power amplifier (PA), and 18-25 GHz wideband CMOS power amplifier are presented. The simulation and measurement results are compared and discussed. Secondly, a 60-GHz 90-nm CMOS variable gain amplifier (VGA) is presented. For the desired low phase-variation in the variable gain control range, the measured phase-variation of the VGA is less than about 10 degree.
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