Abstract
This thesis presents the research on millimeter-wave (MMW) CMOS wideband variable-gain low-noise amplifiers (VG-LNAs) and a 94-GHz CMOS power amplifier (PA) with built-in pre-distortion linearizer, implemented by standard TSMC 0.18-μm or 90-nm GUTM CMOS process. To obtaine wideband frequency response, the resistive-feedback skill with additional passive components is used as the matching network. In the 60-GHz VG-LNA design, a gain boosting inductor is used in order to obtain a better gain performance. In 94-GHz CMOS PA design, a four stage CS cascade structure is adopted for output gain enhancement. Futhermore, the linearity performance of designed PA such as IP1dB is improved by the built-in pre-distortion linearizer. The measured performances of the designed MMW CMOS RFICs are all performed by using the on-wafer measurement. Simulation and measurement results are compared and discussed.
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