Ka-band monolithic low-noise amplifier using direct ion-implanted GaAs MESFETs

Abstract

Ka-band monolithic low-noise amplifiers using low cost direct ion-implanted GaAs MESFETs with 0.25 /spl mu/m T-gates have been developed for use at 27 to 34 GHz. The five stage MMIC amplifier is designed based on 50% Idss self-biasing using a single power supply. These amplifiers achieved 2-3 dB noise figure with 30 dB associated gain at 33 GHz. These results, using low cost ion implantation techniques, rival the best GaAs p-HEMT MMIC results to date. >