Abstract

Broadband sub-millimeter wave technology has received significant attention for potential applications in security, medical, and military imaging. Despite theoretical advantages of reduced size, weight, and power compared to current millimeter-wave systems, sub-millimeter-wave systems are hampered by a fundamental lack of amplification with sufficient gain and noise figure properties. We report on the development of a sub-millimeter wave amplifier module as part of a broadband pixel operating from 300-350 GHz, biased off of a single 2V power supply. Over this frequency range, > 38 dB gain and < 8.3 dB noise figure are obtained and represent the current state-of-art performance capabilities. The prototype pixel chain consists of two WR3 waveguide amplifier blocks, and a horn antenna and diode detector. The low noise amplifier Sub-Millimeter-wave Monolithic Integrated Circuit (SMMIC) was originally developed under the DARPA SWIFT and THz Electronics programs and is based on sub 50 nm Indium Arsenide Composite Channel (IACC) transistor technology with a projected maximum oscillation frequency f max > 1.0 THz. This development and demonstration may bring to life future sub-millimeter-wave and THz applications such as solutions to brown-out problems, ultra-high bandwidth satellite communication cross-links, and future planetary exploration missions.

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