Abstract
Market trend of GaN-based white LEDs and RF HFET is surveyed. Key points for the future white light source for general lighting and high power electron devices are discussed. Advantage of using high-quality GaN substrates grown by Na flux method on the performance of high-current density operation LEDs and also high power electron devices will be shown. Also, merit of using high-density nitrogen radical source on the growth of thick InGaN by plasma-assisted (PA-) molecular beam epitaxy (MBE) is presented.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: The Proceedings of Mechanical Engineering Congress, Japan
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
