Abstract
Potassium-promoted oxidation of the GaSb (1 1 0) surface has been comparatively studied under different combinations of substrate temperature and K-coverage using X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy. Various species of oxygen (O 2−, O 2 2− and O 2 −) have been observed under different conditions. We find that K-coverage and a proper substrate temperature (500 K) is favorable for the oxidation of the semiconductor, with temperature being even more effective than K-coverage. The efficiency of the promoted oxidation is discussed for different experimental conditions. We conclude that the oxidation ability of the oxygen species follows the order KO 2, K 2O 2 and K 2O, and that the fraction of the different species depends on the local atomic ratio of K/O and the substrate temperature.
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