Effect of Substrate Temperature on the Electronic Properties of MgO Thin Films on Si (100) Grown by Electron Beam Evaporation

Abstract

The surface characterization of MgO thin films was investigated by using surface analysis instruments such as X-ray photoelectron spectroscopy (XPS), reflection electron energy loss spectroscopy (REELS) and ultra-violet photoelectron spectroscopy (UPS). The MgO thin films was prepared on Si substrates by using electron beam evaporation deposited at room temperature (RT) and 300 °C in air. The XPS was used to investigate the effect substrate temperature on the chemical state in the thin films surface. The O1s spectra was showed that the hydrate MgO, Mg(OH)2, was detected in the surface of film at RT and it was decreasing at substrate temperature of 300 °C in air. The band gap obtained for MgO thin films using primary energy of 1500 eV were 6.57 and 7.41 eV for film deposited at RT and 300 °C in air, respectively. The work function of MgO thin films were 4.16 and 4.60 eV for films deposited at RT and 300 °C in air, respectively. Our results suggested that the electronic properties can be improved by the heating treatment during deposition.