Abstract
A theoretical model for the dependence of the diode forward voltage (V f ) on junction temperature (T) is developed. A new expression for d V f / d T is derived that takes into account all relevant contributions to the temperature dependence of the forward voltage including the intrinsic carrier concentration, the bandgap energy, and the effective density of states. Experimental results on the junction temperature of GaN UV LEDs are presented. Excellent agreement between the theoretical and experimental temperature coefficient of the forward voltage ( d V f / d T) is found. The experimentally found linear dependence of the junction temperature on forward current is explained by a thermal conduction model. A thermal resistivity of 342.2 K/W is found for the UV LED.
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