Analysis of junction temperatures for groups III–V semiconductor materials of light-emitting diodes

Abstract

This study utilizes the Shockly equation and Fourier’s law with the optical, electrical and thermal properties of LEDs to predict the variation of the junction temperature with the injection current. It is shown that the relationship of the junction temperature with the injection current can be determined by the effective thermal conductivity, temperature coefficient of junction voltage, series resistance, integral constant (forward voltage at the initial forward current and junction temperature), ambient temperature and external quantum efficiency. The effective thermal conductivity, temperature coefficient of junction voltage, and series resistance are calculated from the material properties based on the structures of LEDs instead of measurements in this study. The junction temperature of AlGaInP/GaInP MQW red LED predicted from this study agrees with the available experimental data and the junction temperatures of GaInN UV LED and AlGaN UV LED calculated by this work are also consistent with these obtained from the emission peak shift method. The elevated temperatures of AlGaN and GaInN are larger than that of AlGaInP/GaInP MQW red LED due to the difference of the thermal conductivity for the LED substrate. This study also presents the effects of the parameters on the variation of the junction temperature with the injection current. The effective thermal conductivity and ambient temperature significantly affect the junction temperature of LEDs.