Junction properties of nitrogen‐doped ZnO thin films

Abstract

AbstractZnO‐based p‐n homojunctions, comprised of N‐doped p‐type ZnO and Al‐doped n‐type ZnO layers, were fabricated on n‐Si substrates by atmospheric pressure mist chemical vapor deposition. In/Au metals were deposited on the top of the p‐ZnO layer and on the bottom of the n‐Si substrate to form Ohmic contacts. The n‐Si substrate could serve as a good electrode. The current‐voltage measurements at room temperature showed apparent rectifying behavior for the ZnO p‐n homojunction, with a turn‐on voltage of about 3.8 V under forward bias and a hard breakdown under reverse bias. The time‐dependent instability after fabrication was attributed to the degradation of p‐type conducting of the ZnO:N layer. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)